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Germanium Crystal Layers

Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers. Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis.

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  • Germanium Epitaxial   Layers   XIAMEN POWERWAY

    Germanium Epitaxial Layers XIAMEN POWERWAY

    Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers. Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis.

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  • Kinetics And Crystal   Texture Improvements On Thin ..

    Kinetics And Crystal Texture Improvements On Thin ..

    Kinetics and crystal texture improvements on thin germanium layers obtained by aluminium induced crystallization using oxygen plasma. Author links open overlay panel D. Pelati a b d O. Mauguin b L. Largeau b F. Brisset c F. Glas b F. Oehler b. Show more.

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  • Anisotropic Optical Properties Of   Layered Germanium …

    Anisotropic Optical Properties Of Layered Germanium …

    Anisotropic Optical Properties of Layered Germanium Sulfide. Schematic crystal structure, (b) Optical image and (c) AFM image of a 65 nm-thick GeS flake. Anisotropic Optical Properties of

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  • Ultra Dense   Phosphorus In Germanium Delta Doped   Layers.

    Ultra Dense Phosphorus In Germanium Delta Doped Layers.

    2009-12-3 · Ultra-dense phosphorus in germanium delta-doped layers. G. Scappucci,1 School of Physics and Australian Research Council Centre of Excellence for Quantum Computer Technology, University of New South Wales, Sydney, NSW 2052, Australia. G. Capellini, Dipartimento di Fisica, Università di Roma Tre, Via della Vasca Navale 84, 00146 Roma, Italy.

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  • Direct Band Gap Germanium Microdisks   Obtained …

    Direct Band Gap Germanium Microdisks Obtained …

    2016-2-3 · Germanium is an ideal candidate to achieve a monolithically integrated laser source on silicon. Unfortunately bulk germanium is an indirect band gap semiconductor. Here, we demonstrate that a thick germanium layer can be transformed from an indirect into a direct band gap semiconductor by using silicon nitride stressor layers. We achieve 1.75% (1.67%) biaxial tensile strain in 6 (9) μm

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  • US6537370B1   Process For Obtaining A Layer Of Single   ..

    US6537370B1 Process For Obtaining A Layer Of Single ..

    The processes described above therefore make it possible to obtain germanium layers of single-crystal structure directly deposited on silicon which are of very high quality and which allow further deposition by heteroepitaxy of elements of Groups III to V of the Periodic Table and of compounds of these elements (III-V heteroepitaxy) such as GaAs.

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  • GeSe     Germanium Selenide

    GeSe Germanium Selenide

    GeSe (Germanium Selenide) GeSe is a semiconductor with an indirect band gap ~1.1 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Germanium Selenide belongs to the group-VI transition metal monochalcogenides.

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  • Critical Performance Differences Of   Monocrystalline Versus ..

    Critical Performance Differences Of Monocrystalline Versus ..

    2015-1-9 · Germanium (Ge) is a useful optical material over the mid-wave and long-wave infrared wavelength region. It can be used as a window, dome or lens substrate, and it can be coated with thin film layers to enhance its optical performance and durability. It can be obtained in the form of a single crystal or as polycrystalline material.

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  • Nanostructured Germanium   For Portable Photovoltaics And ..

    Nanostructured Germanium For Portable Photovoltaics And ..

    2015-12-8 · Filled with suitable organic polymers the highly porous germanium nanofilm becomes a hybrid solar cell. Here, the thin but robust germanium hybrid layers provide a real

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  • Photoconductive Response Of Single Crystal   …

    Photoconductive Response Of Single Crystal …

    2019-1-30 · Layers of single crystal germanium have been prepared by pyrolytic decomposition of GeI2 at about 350°C upon single crystal seeds of germanium by J. C. Marinace. The substrate germanium could be removed and the resultant thin layers (∼5×10−3 cm) studied. The Hall coefficient and resistivity measured on these layers by Dunlap et al. showed that the layers as grown were usually n type and

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  • Direct Band Gap Germanium Microdisks   Obtained …

    Direct Band Gap Germanium Microdisks Obtained …

    2016-2-3 · Germanium is an ideal candidate to achieve a monolithically integrated laser source on silicon. Unfortunately bulk germanium is an indirect band gap semiconductor. Here, we demonstrate that a thick germanium layer can be transformed from an indirect into a direct band gap semiconductor by using silicon nitride stressor layers. We achieve 1.75% (1.67%) biaxial tensile strain in 6 (9) μm

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  • Characterization Of Dislocations In   Germanium Layers …

    Characterization Of Dislocations In Germanium Layers …

    2017-2-22 · Characterization of dislocations in germanium layers grown on (011)- and (111)-oriented silicon by combination of a four-crystal Ge monochromator in the 220 setting, a two-crystal Ge analyzer in the same setting and a scintillation counter was used to achieve sufficient resolution

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  • Phosphorus Atomic Layer Doping Of   Germanium By The ..

    Phosphorus Atomic Layer Doping Of Germanium By The ..

    Phosphorus atomic layer doping of germanium by the stacking of multiple δ layers G Scappucci1, 2, G Capellini3, W M Klesse1, and M Y Simmons1,2 1 School of Physics, University of New South Wales, Sydney, NSW 2052, Australia 2 Australian Research Council Centre of Excellence for Quantum Computation and

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  • Structural Properties Of Relaxed Thin Film   Germanium ..

    Structural Properties Of Relaxed Thin Film Germanium ..

    2019-3-18 · We report on unusual low temperature (175 °C) heteroepitaxial growth of germanium thin films using a standard radio-frequency plasma process. Spectroscopic ellipsometry and transmission electron microscopy (TEM) reveal a perfect crystalline quality of epitaxial germanium layers on (100) c-Ge wafers. In addition direct germanium crystal growth is achieved on (100) c-Si, despite 4.2% lattice

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  • US20090189185A1   Epitaxial Growth Of Relaxed Silicon   ..

    US20090189185A1 Epitaxial Growth Of Relaxed Silicon ..

    C30 — CRYSTAL GROWTH; Disclosed herein is an improved technique for creating relaxed silicon germanium layers having a reduced density of threading dislocations using conventional CVD equipment. In an exemplary embodiment, an epitaxially grown silicon buffer layer is deposited using conventional CVD equipment, and a silicon germanium

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  • GeS     Germanium Sulfide   HQ Graphene

    GeS Germanium Sulfide HQ Graphene

    GeS (Germanium sulfide) GeS is a semiconductor with an indirect band gap of 1.6 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. GeS belongs to the group-14 transition metal monochalcogenides.

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  • First Germanium Laser | MIT News

    First Germanium Laser | MIT News

    MIT researchers have demonstrated the first laser built from germanium that can produce wavelengths of light useful for optical communication. It’s also the first germanium laser to operate at room temperature. Unlike the materials typically used in lasers, germanium is easy to incorporate into existing processes for manufacturing silicon chips.

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  • Silicon Germanium   Wikipedia

    Silicon Germanium Wikipedia

    2019-4-29 · Silicon Germanium-on-insulator (SGOI) is a technology analogous to the Silicon-On-Insulator (SOI) technology currently employed in computer chips. SGOI increases the speed of the transistors inside microchips by straining the crystal lattice under the MOS transistor gate,

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  • Structural Properties Of Relaxed Thin Film   Germanium ..

    Structural Properties Of Relaxed Thin Film Germanium ..

    2019-3-18 · We report on unusual low temperature (175 °C) heteroepitaxial growth of germanium thin films using a standard radio-frequency plasma process. Spectroscopic ellipsometry and transmission electron microscopy (TEM) reveal a perfect crystalline quality of epitaxial germanium layers on (100) c-Ge wafers. In addition direct germanium crystal growth is achieved on (100) c-Si, despite 4.2% lattice

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  • Structure   Changes Caused By The Stress Gradient In ..

    Structure Changes Caused By The Stress Gradient In ..

    V. Nadtochy et al., "Structure Changes Caused by the Stress Gradient in Subsurface Layers of Germanium Single Crystals ", Solid State Phenomena, Vol.

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  • New Germanium Based Material Could   Replace Silicon For ..

    New Germanium Based Material Could Replace Silicon For ..

    2017-11-16 · New Germanium-Based Material Could Replace Silicon for Electronics The old adage “what goes around comes around” is now being applied in electronics. Before silicon

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  • The Germanium Tin Laser:   Answer To The On Chip …

    The Germanium Tin Laser: Answer To The On Chip …

    2015-1-23 · The Germanium-Tin Laser: Answer to the On-Chip Data Bottleneck? which means their crystal layers can be grown directly on silicon. So a germanium

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  • Germanium Slims Down To   Skinny Layers | Chemical ..

    Germanium Slims Down To Skinny Layers | Chemical ..

    Germanium Slims Down To Skinny Layers. table to create similarly slim materials from carbon’s elemental cousin germanium that the crystal surfaces slowly oxidize in air over the span of

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  • GeS Crystals   1 Cm Or Larger Size High Quality GeS   ..

    GeS Crystals 1 Cm Or Larger Size High Quality GeS ..

    GeS (Germanium sulfide) is a 2D semiconductor with 1.65 eV band gap in the bulk form. They exhibit strong in-plane crystalline anisotropy giving rise to highly anisotropic excitons, high carrier mobility channels, and thermal conduction pathways. Theoretically it has been predicted to undergo a structural phase transition around 400 C.

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  • Low‐Temperature Synthesis Of   Single‐Crystal …

    Low‐Temperature Synthesis Of Single‐Crystal …

    Live‐wire potential: Low‐temperature growth of Ge nanowires has been achieved by the chemical vapor deposition of GeH 4 onto a SiO 2 substrate coated with Au nanoparticles (see picture). This technique, which represents the mildest growth conditions for single‐crystal nanowire synthesis, can also be used for patterned growth processes.

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  • Application Note AN # 79 Attenuated Total   Reflection …

    Application Note AN # 79 Attenuated Total Reflection …

    2013-5-2 · Application Note AN # 79 Attenuated Total Reflection (ATR) – a versatile tool for FT-IR spectroscopy thin layers, Ge yields good results due to the low depth of penetration. Diamond is very robust and chemically inert In this case, germanium is the ideal crystal material. The

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  • Process   For Obtaining A Layer Of Single Crystal …

    Process For Obtaining A Layer Of Single Crystal …

    The processes described above therefore make it possible to obtain germanium layers of single-crystal structure directly deposited on silicon which are of very high quality and which allow further deposition by heteroepitaxy of elements of Groups III to V of the Periodic Table and of compounds of these elements (III-V heteroepitaxy) such as GaAs.

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  • Germanium Oxide   Layers Used For Forward Transfer Of ..

    Germanium Oxide Layers Used For Forward Transfer Of ..

    Germanium Oxide Layers Used for Forward Transfer of Electrical Circuits to Foreign Plastic Substrates Toshiyuki SAMESHIMA, Kazuya YOSHIOKA and Kazushige TAKECHI1 Tokyo University of Agriculture and Technology, 2-24-16, Naka-cho, Koganei, Tokyo 184-8588, Japan

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  • Germanium Slims Down To   Skinny Layers | Chemical ..

    Germanium Slims Down To Skinny Layers | Chemical ..

    Germanium Slims Down To Skinny Layers. table to create similarly slim materials from carbon’s elemental cousin germanium that the crystal surfaces slowly oxidize in air over the span of

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  • Electrical   Characteristics Of P Type Germanium Layers ..

    Electrical Characteristics Of P Type Germanium Layers ..

    An investigation for a single-crystal n-type germanium bombarded with B+, Ga+ and In+ ions in a non-channelled direction by means of the determination of the electrical profile is described. For ion-implanted layers sheet resistivity measurements are not suitable for determining the number of active carriers obtained for the implant because

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  • Process   For Obtaining A Layer Of Single Crystal …

    Process For Obtaining A Layer Of Single Crystal …

    The processes described above therefore make it possible to obtain germanium layers of single-crystal structure directly deposited on silicon which are of very high quality and which allow further deposition by heteroepitaxy of elements of Groups III to V of the Periodic Table and of compounds of these elements (III-V heteroepitaxy) such as GaAs.

    View details
  • Photoconductive Response Of Single Crystal   …

    Photoconductive Response Of Single Crystal …

    Abstract Layers of single crystal germanium have been prepared by pyrolytic decomposition of GeI 2 at about 350°C upon single crystal seeds of germanium by J. C. Marinace. The substrate germanium could be removed and the resultant thin layers (˜5×10-3 cm) studied. The Hall coefficient and resistivity measured on these layers by Dunlap et al. showed that the layers as grown were usually n

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  • X Ray Diffraction Reveals 3D Mechanics Of   Germanium ..

    X Ray Diffraction Reveals 3D Mechanics Of Germanium ..

    2012-4-18 · X-ray diffraction reveals 3D mechanics of germanium-crystal arrays. Grenoble, France--Scientists at the European Synchrotron Radiation Facility (ESRF) are using X-ray diffraction to thoroughly understand a new type of nanostructure -- square arrays of germanium (Ge) pillars that have very complex geometries and physical attributes.

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  • 1 Cm Size GeTe (germanium Telluride)   Crystals ..

    1 Cm Size GeTe (germanium Telluride) Crystals ..

    Our single crystal GeTe (Germanium telluride) crystals come with guaranteed anisotropy, electronic, and optical grade crystal quality. They are developed at our facilities using state-of-art flux zone techniques. Each growth takes close to three months to provide you

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  • Characterization Of Dislocations In   Germanium Substrates ..

    Characterization Of Dislocations In Germanium Substrates ..

    2005-7-7 · to the germanium crystal. After cleaning, the samples were loaded into the UHV system and transferred to the MOCVD reactor through an interface chamber. They were annealed in 2.0 Torr tertiary-butyarsine ~TBAs! and 97.0 Torr hydrogen (H2) at 650 °C for 30 min to passivate the germanium

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  • Crystal   Types Of Bonds |   Britannica.com

    Crystal Types Of Bonds | Britannica.com

    Crystal - Types of bonds: The properties of a solid can usually be predicted from the valence and bonding preferences of its constituent atoms. Four main bonding types are discussed here: ionic, covalent, metallic, and molecular. Hydrogen-bonded solids, such as ice, make up another category that is important in a few crystals. There are many examples of solids that have a single bonding type

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  • Graphene And Germanium: A   Happy Marriage With …

    Graphene And Germanium: A Happy Marriage With …

    2014-9-25 · A germanium substrate boosts the electrical properties of graphene A Happy Marriage With Exceptional Conductivity which acts like a single crystal and could be

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  • 4. Doping Of Group IV Based Materials

    4. Doping Of Group IV Based Materials

    2011-2-22 · The remarkable potential of the SiGe material arises from the possibility to modify its properties by altering the composition. For instance, the band gap decreases from 1.12eV (pure silicon) to 0.66eV (pure germanium) at room temperature. The lattice parameter of the germanium crystal is 4.2% larger than that of silicon.

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